Publication Order Number:

MMSF5P02HD/D

© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 4

1

MMSF5P02HD

Preferred Device

Power MOSFET

5 Amps, 20 Volts

P−Channel SO−8

and true logic level performance. They are capable of withstanding high

energy in the avalanche and commutation modes and the drain−to−source

diode has a very low reverse recovery time. MiniMOS

t devices are

designed for use in low voltage, high speed switching applications where

power efficiency is important. Typical applications are dc−dc converters,

and power management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be used

for low voltage motor controls in mass storage products such as disk

drives and tape drives. The avalanche energy is specified to eliminate the

guesswork in designs where inductive loads are switched and offer

additional safety margin against unexpected voltage transients.

Life

D

S

G

P−Channel

N−C

1

2

3

4

8

7

6

5

Top View

Source

Source

Gate

Drain

Drain

Drain

Drain

1

8

5 AMPERES

20 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

MMSF5P02HDR2

SO−8

2500 Tape & Reel

SO−8

CASE 751

STYLE 13

http://onsemi.com

LYWW

MARKING

DIAGRAM

S5P02H

L

= Location Code

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

Preferred devices are recommended choices for future use

and best overall value.