IRF530 datasheet(3/7 Pages) ONSEMI

部件名	IRF530

功能描述	N?묬hannel Enhancement?묺ode Silicon Gate

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制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

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IRF530

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TYPICAL ELECTRICAL CHARACTERISTICS

0

246

8

10

0

15

25

30

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0

5

10

20

0.00

0.02

0.06

0.10

0.14

05

20

3

0.06

0.08

0.10

0.12

0.14

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

−50

0

0.4

1.2

2.0

20

40

60

80

90

100

1

10

100

1000

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−To−Source Leakage

Current versus Voltage

−25

0

25

50

75

100

125

150

TJ = 25°C

VDS ≥ 10 V

TJ = −55°C

25°C

100°C

TJ = 100°C

25°C

−55°C

TJ = 25°C

VGS = 10 V

10

20

13

57

9

5

9 V

5 V

6 V

7 V

8 V

VGS = 10 V

0

15

25

30

10

20

5

23

4

5

6

7

8

0.12

0.08

0.04

15

25

30

0.13

0.11

0.09

0.07

10

15

25

0.8

1.6

30

50

70

VGS = 10 V

15 V

VGS = 10 V

ID = 8 A

0.2

0.6

1.4

1.0

1.8

10

0

VGS = 0 V

TJ = 125°C

100°C

0.16

0.18

0.20

2.5

3.5

4.5

5.5

6.5

7.5

8.5

2.5

7.5

12.5

22.5

17.5

27.5

2.5

7.5

22.5

12.5

17.5

27.5

1

类似零件编号 - IRF530

制造商	部件名	数据表	功能描述
Motorola, Inc	IRF530	157Kb / 2P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
First Components Intern...	IRF530	356Kb / 6P	14.0A 100V N CHANNEL POWER MOSFET
STMicroelectronics	IRF530	47Kb / 3P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR June 1988
Vishay Siliconix	IRF530	282Kb / 9P	Power MOSFET Rev. B, 21-Mar-11
Transys Electronics	IRF530	481Kb / 5P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE

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