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TS393DR2G 数据表(PDF) 4 Page - ON Semiconductor |
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TS393DR2G 数据表(HTML) 4 Page - ON Semiconductor |
4 / 8 page NCV2393, TS393 http://onsemi.com 4 ELECTRICAL CHARACTERISTICS : VS = +5 V, unless otherwise noted (Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.) Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage VOS VCM = mid−supply V, VS = 5 V to 10 V 1.4 mV Input Bias Current (Note 8) IIB VCM = mid−supply 1 pA 600 pA Input Offset Current (Note 8) IOS VCM = mid−supply 1 pA 300 pA Input Common Mode Range VCM VSS VDD – 1.5 V VSS VDD − 2 V Common Mode Rejection Ratio CMRR VCM = VSS to VCM = VDD − 1.5 V 71 dB OUTPUT CHARACTERISTICS Output Voltage Low VOL VID = −1 V, IOL = +6 mA VSS + 260 VSS + 350 mV VSS + 550 mV Output Current High IOH VID = +1 V, VOH = +5 V 2 40 nA 1000 nA DYNAMIC PERFORMANCE Fall Time tFALL 50 mV overdrive, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF 25 ns Propagation Delay Low to High tPLH VCM = mid−supply, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF 5 mV overdrive 2.1 ms 10 mV overdrive 1.2 ms 20 mV overdrive 0.8 ms 40 mV overdrive 0.5 ms TTL input 0.6 ms Propagation Delay High to Low tPHL VCM = mid−supply, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF 5 mV overdrive 5.8 ms 10 mV overdrive 3.2 ms 20 mV overdrive 1.7 ms 40 mV overdrive 1.0 ms TTL input 0.3 ms POWER SUPPLY Power Supply Rejection Ratio PSRR VS = +5 V to = +10 V 80 dB Quiescent Current IDD Per channel, no load, output = LOW 6 15 mA 20 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Guaranteed by characterization and/or design |
类似零件编号 - TS393DR2G |
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类似说明 - TS393DR2G |
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