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2SC3646S-TD-E 数据表(PDF) 2 Page - ON Semiconductor

部件名 2SC3646S-TD-E
功能描述  Bipolar Transistor
Download  7 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

2SC3646S-TD-E 数据表(HTML) 2 Page - ON Semiconductor

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2SA1416 / 2SC3646
No.2005-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)100V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)100
nA
DC Current Gain
hFE
VCE=(--)5V, IC=(--)100mA
100*
400*
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)100mA
120
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(13)8.5
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)400mA, IB=(--)40mA
(--0.2)0.1
(--0.6)0.4
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)400mA, IB=(--)40mA
(--)0.85
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)100
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-ON Time
ton
See specified Test Circuit.
(80)80
ns
Storage Time
tstg
(700)850
ns
Fall Time
tf
(40)50
ns
* : The 2SA1416 / 2SC3646 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA1416S-TD-E
PCP
1,000pcs./reel
Pb Free
2SA1416T-TD-E
PCP
1,000pcs./reel
2SC3646S-TD-E
PCP
1,000pcs./reel
2SC3646T-TD-E
PCP
1,000pcs./reel
INPUT
50V
50
Ω
RL
100
μF
470
μF
--5V
IC=10IB1=--10IB2=400mA
(For PNP, the polarity is reversed)
+
+
VR
PW=20
μs
D.C.
≤1%
RB
IB1
IB2


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