数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

2N3636L 数据表(PDF) 2 Page - ON Semiconductor

部件名 2N3636L
功能描述  Low Power Transistors
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

2N3636L 数据表(HTML) 2 Page - ON Semiconductor

  2N3636L Datasheet HTML 1Page - ON Semiconductor 2N3636L Datasheet HTML 2Page - ON Semiconductor 2N3636L Datasheet HTML 3Page - ON Semiconductor 2N3636L Datasheet HTML 4Page - ON Semiconductor 2N3636L Datasheet HTML 5Page - ON Semiconductor 2N3636L Datasheet HTML 6Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = −10 mA)
2N3634, 2N3635
2N3636, 2N3637
V(BR)CEO
−140
−175
V
Emitter−Base Cutoff Current
(VEB = −3.0 V)
(VEB = −5.0 V)
IEBO
−50
−10
nA
mA
Collector−Emitter Cutoff Current
(VCE = −100 V)
ICEO
−10
mA
Collector−Base Cutoff Current
(VCB = −100 V)
(VCB = −140 V)
2N3634, 2N3635
(VCB = −175 V)
2N3636, 2N3637
ICBO
−100
−10
−10
nA
mA
mA
ON CHARACTERISTICS (Note 1)
DC Current Gain
2N3634, 2N3636
(IC = −0.1 mA, VCE = −10 V)
(IC = −1.0 mA, VCE = −10 V)
(IC = −10 mA, VCE = −10 V)
(IC = −50 mA, VCE = −10 V)
(IC = −150 mA, VCE = −10 V)
hFE
25
45
50
50
30
150
DC Current Gain
2N3635, 2N3637
(IC = −0.1 mA, VCE = −10 V)
(IC = −1.0 mA, VCE = −10 V)
(IC = −10 mA, VCE = −10 V)
(IC = −50 mA, VCE = −10 V)
(IC = −150 mA, VCE = −10 V)
hFE
55
90
100
100
60
300
Collector − Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −50 mA, IB = −5.0 mA)
VCE(sat)
−0.3
−0.6
V
Base − Emitter Saturation Voltage
(IC = −10 mA, IB = −1.0 mA)
(IC = −50 mA, IB = −5.0 mA)
VBE(sat)
−0.65
−0.8
−0.9
V
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(IC = −30 mA, VCE = −30 V, f = 100 MHz)
2N3634, 2N3636
2N3635, 2N3637
|hfe|
1.5
2.0
8.0
8.5
Small−Signal Current Gain
(IC = −10 mA, VCE = −10 V, f = 1 kHz)
2N3634, 2N3636
2N3635, 2N3637
hfe
40
80
160
320
Output Capacitance
(VCB = −20 V, IE = 0 A, 100 kHz ≤ f ≤ 1.0 MHz)
Cobo
10
pF
Input Capacitance
(VEB = −1.0 V, IC = 0 A, 100 kHz ≤ f ≤ 1.0 MHz)
Cibo
75
pF
Noise Figure
(VCE = −10 V, IC = −0.5 mA, Rg = 1 kW, f = 100 Hz)
(VCE = −10 V, IC = −0.5 mA, Rg = 1 kW, f = 1.0 kHz)
(VCE = −10 V, IC = −0.5 mA, Rg = 1 kW, f = 10 kHz)
NF
5.0
3.0
3.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(Reference Figure 11 in MIL−PRF−19500/357)
td
100
ns
Rise Time
(Reference Figure 11 in MIL−PRF−19500/357)
tr
100
ns
Storage Time
(Reference Figure 11 in MIL−PRF−19500/357)
ts
500
ns
Fall Time
(Reference Figure 11 in MIL−PRF−19500/357)
tf
150
ns
Turn−Off Time
(Reference Figure 11 in MIL−PRF−19500/357)
toff
600
ns
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.


类似零件编号 - 2N3636L

制造商部件名数据表功能描述
logo
Microsemi Corporation
2N3636L MICROSEMI-2N3636L Datasheet
57Kb / 2P
   PNP SILICON AMPLIFIER TRANSISTOR
2N3636L MICROSEMI-2N3636L Datasheet
233Kb / 5P
   RADIATION HARDENED
2N3636L MICROSEMI-2N3636L Datasheet
174Kb / 5P
   PNP SILICON SWITCHING TRANSISTOR
More results

类似说明 - 2N3636L

制造商部件名数据表功能描述
logo
ON Semiconductor
2N3019SJANTX ONSEMI-2N3019SJANTX Datasheet
112Kb / 4P
   Low Power Transistors
August, 2012 ??Rev. 2
logo
List of Unclassifed Man...
672-3866A ETC-672-3866A Datasheet
363Kb / 5P
   RF & MICROWAVE TRANSISTORS LOW POWER TRANSISTORS
T2N4401 ETC2-T2N4401 Datasheet
254Kb / 7P
   Low Power Bipolar Transistors
logo
STMicroelectronics
MJD360T4-A STMICROELECTRONICS-MJD360T4-A Datasheet
92Kb / 7P
   Low voltage complementary power transistors
logo
American Microsemicondu...
2N5163 AMMSEMI-2N5163 Datasheet
905Kb / 1P
   LOW POWER FIELD EFFECT TRANSISTORS
logo
STMicroelectronics
BD235 STMICROELECTRONICS-BD235_09 Datasheet
232Kb / 9P
   Low voltage NPN power transistors
logo
American Microsemicondu...
2N4224 AMMSEMI-2N4224 Datasheet
905Kb / 1P
   LOW POWER FIELD EFFECT TRANSISTORS
2N5362 AMMSEMI-2N5362 Datasheet
905Kb / 1P
   LOW POWER FIELD EFFECT TRANSISTORS
2N5457 AMMSEMI-2N5457 Datasheet
905Kb / 1P
   LOW POWER FIELD EFFECT TRANSISTORS
2N4221 AMMSEMI-2N4221 Datasheet
905Kb / 1P
   LOW POWER FIELD EFFECT TRANSISTORS
More results


Html Pages

1 2 3 4 5 6


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com