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SIZ914DT 数据表(PDF) 8 Page - Vishay Telefunken |
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SIZ914DT 数据表(HTML) 8 Page - Vishay Telefunken |
8 / 14 page www.vishay.com 8 Document Number: 62905 S13-2181-Rev. A, 14-Oct-13 Vishay Siliconix SiZ914DT This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 20 40 60 80 0 0.5 1 1.5 2 V DS - Drain-to-Source Voltage (V) V GS = 3 V V GS = 10 V thru 4 V 0 0.0005 0.001 0.0015 0.002 0.0025 0 15 30 45 60 I D - Drain Current (A) V GS = 4.5 V V GS = 10 V 0 2 4 6 8 10 0 14 28 42 56 70 Q g - Total Gate Charge (nC) V DS = 24 V V DS = 8 V, 15 V I D = 20 A Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 1 2 3 4 5 0 0.6 1.2 1.8 2.4 3 V GS - Gate-to-Source Voltage (V) T C = 25 °C T C = 125 °C T C = - 55 °C 0 2000 4000 6000 8000 0 6 12 18 24 30 V DS - Drain-to-Source Voltage (V) C iss C oss C rss 0.65 0.9 1.15 1.4 1.65 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) I D = 20A V GS = 10 V V GS = 4.5 V V |
类似零件编号 - SIZ914DT |
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