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SI6954ADQ 数据表(PDF) 1 Page - Vishay Telefunken |
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SI6954ADQ 数据表(HTML) 1 Page - Vishay Telefunken |
1 / 10 page Vishay Siliconix Si6954ADQ Document Number: 71130 S-81221-Rev. C, 02-Jun-08 www.vishay.com 1 N-Channel 2.5-V (G-S) Battery Switch FEATURES • Halogen-free • TrenchFET® Power MOSFETs: 2.5 V Rated PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 30 0.053 at VGS = 10 V 3.4 0.075 at VGS = 4.5 V 2.9 D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 TSSOP-8 Top View Ordering Information: Si6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G1 S1 N-Channel MOSFET G2 S2 N-Channel MOSFET D1 D2 Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 3.4 3.1 A TA = 70 °C 2.7 2.5 Pulsed Drain Current (10 µs Pulse Width) IDM 20 Continuous Source Current (Diode Conduction)a IS 0.83 0.69 Maximum Power Dissipationa TA = 25 °C PD 1.0 0.83 W TA = 70 °C 0.96 0.53 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 90 125 °C/W Steady State 126 150 Maximum Junction-to-Foot (Drain) Steady State RthJF 65 80 RoHS COMPLIANT |
类似零件编号 - SI6954ADQ |
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类似说明 - SI6954ADQ |
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