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SI4916DY 数据表(PDF) 5 Page - Vishay Telefunken |
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SI4916DY 数据表(HTML) 5 Page - Vishay Telefunken |
5 / 13 page Document Number: 74331 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 5 Vishay Siliconix Si4916DY CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ = 150 °C 40 10 0.1 VSD – Source-to-Drain Voltage (V) TJ = 25 °C 1 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ – Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 0 2468 10 VGS – Gate-to-Source Voltage (V) ID = 7.5 A 0.001 0 1 120 40 60 10 0.1 Time (s) 20 80 0.01 100 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 TC = 25 °C Single Pulse 0.1 IDM Limited ID(on) Limited DS(on) * Limited by R BVDSS Limited 1 ms 10 ms 100 ms 1 s 10 s VDS – > Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified DC |
类似零件编号 - SI4916DY |
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类似说明 - SI4916DY |
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