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SI7748DP 数据表(PDF) 4 Page - Vishay Telefunken |
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SI7748DP 数据表(HTML) 4 Page - Vishay Telefunken |
4 / 13 page Si7748DP www.vishay.com Vishay Siliconix S14-1030-Rev. B, 12-May-14 4 Document Number: 68785 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Reverse Current (Schottky) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 150 °C TJ = 25 °C 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 10-3 10-5 10-6 10-4 10-2 10-1 30 V 10 V 20 V 0 0.005 0.010 0.015 0.020 0.025 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ =25 °C TJ = 125 °C ID =15A 0 40 80 120 160 200 10 1 1 0 0 . 00.01 Time (s) 0.1 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 V DS -Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 us 100 ms Limited by R DS(on)* 1 ms I DM Limited T C = 25 °C Single Pulse BVDSS Limited 10 ms 10 s 1 s DC I D Limited |
类似零件编号 - SI7748DP |
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类似说明 - SI7748DP |
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