SI4630DY datasheet(2/10 Pages) TFUNK

部件名	SI4630DY

功能描述	N-Channel 25-V (D-S) MOSFET

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制造商	TFUNK [Vishay Telefunken]

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Document Number: 73685

S09-0138-Rev. C, 02-Feb-09

Vishay Siliconix

Si4630DY

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

25

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

28

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 6

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

2.2

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 16 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 25 V, VGS = 0 V

1

µA

VDS = 25 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 10 V

30

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 20 A

0.0022

0.0027

Ω

VGS = 4.5 V, ID = 15 A

0.0026

0.0032

Forward Transconductancea

gfs

VDS = 15 V, ID = 20 A

120

S

Dynamicb

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

6670

pF

Output Capacitance

Coss

997

Reverse Transfer Capacitance

Crss

531

Total Gate Charge

Qg

VDS = 15 V, VGS = 10 V, ID = 20 A

107.5

161

nC

VDS = 15 V, VGS = 4.5 V, ID = 20 A

49

73

Gate-Source Charge

Qgs

15.7

Gate-Drain Charge

Qgd

13.6

Gate Resistance

Rg

f = 1 MHz

1.5

2.25

Ω

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5Ω

ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

37

56

ns

Rise Time

tr

122

185

Turn-Off DelayTime

td(off)

47

71

Fall Time

tf

15

23

Turn-On Delay Time

td(on)

VDD = 15 V, RL = 1.5 Ω

ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω

17

26

Rise Time

tr

93

140

Turn-Off DelayTime

td(off)

60

90

Fall Time

tf

915

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

IS

TC = 25 °C

7

A

Pulse Diode Forward Currenta

ISM

70

Body Diode Voltage

VSD

IS = 3 A

0.72

1.1

V

Body Diode Reverse Recovery Time

trr

IF = 13 A, dI/dt = 100 A/µs, TJ = 25 °C

47

70

ns

Body Diode Reverse Recovery Charge

Qrr

50

75

nC

Reverse Recovery Fall Time

ta

23

ns

Reverse Recovery Rise Time

tb

24

类似零件编号 - SI4630DY

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI4630DY	239Kb / 10P	N-Channel 25-V (D-S) MOSFET Rev. C, 02-Feb-09
	SI4630DY	174Kb / 9P	N-Channel 25-V (D-S) MOSFET Rev. C, 02-Feb-09
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	SI4630DY-T1-E3	239Kb / 10P	N-Channel 25-V (D-S) MOSFET Rev. C, 02-Feb-09
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制造商	部件名	数据表	功能描述
Vishay Siliconix	SI4668DY	103Kb / 7P	N-Channel 25-V (D-S) MOSFET Rev. B, 09-Mar-09
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	SIR850DP	109Kb / 7P	N-Channel 25-V (D-S) MOSFET Rev. B, 22-Sep-08
	SI1304DL	88Kb / 5P	N-Channel 25-V (D-S) MOSFET Rev. C, 04-Oct-04
	SI4630DY	174Kb / 9P	N-Channel 25-V (D-S) MOSFET Rev. C, 02-Feb-09
	SIDR140DP	194Kb / 8P	N-Channel 25 V (D-S) MOSFET Rev. A, 27-Nov-17

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SI4630DY 数据表(PDF) 2 Page - Vishay Telefunken

SI4630DY 数据表(HTML) 2 Page - Vishay Telefunken

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SI4630DY 数据表(PDF) 2 Page - Vishay Telefunken

SI4630DY 数据表(HTML) 2 Page - Vishay Telefunken

类似零件编号 - SI4630DY

类似说明 - SI4630DY

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