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SI6562CDQ 数据表(PDF) 1 Page - Vishay Telefunken |
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SI6562CDQ 数据表(HTML) 1 Page - Vishay Telefunken |
1 / 17 page Vishay Siliconix Si6562CDQ New Product Document Number: 68954 S-82575-Rev. A, 27-Oct-08 www.vishay.com 1 N- and P-Channel 20-V (D-S) MOSFETs FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • DC/DC Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) N-Channel 20 0.022 at VGS = 4.5 V 6.7a 6.7 nC 0.036 at VGS = 2.5 V 5.2a P-Channel - 20 0.030 at VGS = - 4.5 V - 6.1a 17 nC 0.045 at VGS = - 2.5 V - 5.0a Ordering Information: Si6562CDQ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G1 D1 S1 S2 G2 D2 P-Channel MOSFET D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 TSSOP-8 Top View Notes: a. TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 145 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6.7 - 6.1 A TC = 70 °C 4.2 - 4.9 TA = 25 °C 5.7b, c - 5.1b, c TA = 70 °C 4.5b, c - 4.1b, c Pulsed Drain Current IDM 30 - 30 Source Drain Current Diode Current TC = 25 °C IS 1.3 - 1.4 TA = 25 °C 0.9b, c - 1.0b, c Maximum Power Dissipation TC = 25 °C PD 1.6 1.7 W TC = 70 °C 1.0 1.1 TA = 25 °C 1.1b, c 1.2b, c TA = 70 °C 0.7b, c 0.76b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol N-Channel P-Channel Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 85 110 81 105 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 62 80 57 75 RoHS COMPLIANT |
类似零件编号 - SI6562CDQ |
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类似说明 - SI6562CDQ |
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