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SI1016CX 数据表(PDF) 5 Page - Vishay Telefunken |
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SI1016CX 数据表(HTML) 5 Page - Vishay Telefunken |
5 / 12 page Si1016CX www.vishay.com Vishay Siliconix S14-1174-Rev. C, 09-Jun-14 5 Document Number: 67535 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0 2 4 6 8 00.5 11.5 Q g -Total Gate Charge (nC) V DS = 16 V I D = 0.6 A V DS = 5 V V DS = 10 V 0.1 1 10 0.0 0.3 0.6 0.9 1.2 1.5 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.35 0.45 0.55 0.65 0.75 - 50 - 25 0 255075 100 125 150 T J -Temperature (°C) I D = 250 μA 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 T J - Junction Temperature (°C) I D = 0.5 A V GS = 4.5 V V GS = 2.5 V 0 0.2 0.4 0.6 0.8 012345 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 0.5 A 0 0.45 0.9 1.35 1.8 2.25 2.7 0.01 0.1 1 10 100 Time (s) |
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