数据搜索系统,热门电子元器件搜索 |
|
TC650EDVUA 数据表(PDF) 3 Page - Microchip Technology |
|
TC650EDVUA 数据表(HTML) 3 Page - Microchip Technology |
3 / 14 page © 2002 Microchip Technology Inc. DS21450B-page 3 TC650/TC651 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Voltage (VDD to GND) ...................................+6V Output Voltage (OUT to GND) ................................. 6V Voltage On Any Pin ....... (GND – 0.3V) to (VDD +0.3V) Package Thermal Resistance ( θJA ) ..............250°C/W Operating Temperature Range .......... -40 °Cto+125°C Storage Temperature ......................... -65 °Cto+150°C *Stresses above those listed under "Absolute Maximum Rat- ings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Expo- sure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC650/TC651 ELECTRICAL SPECIFICATIONS Note 1: Transition from 90% to 100% Duty Cycle. Electrical Characteristics: VDD = 2.8V to 5.5V, SHDN =VDD,TA =-40°Cto 125°C unless otherwise specified. Symbol Parameter Min Typ. Max Units Test Conditions VDD Supply Voltage 2.8 — 5.5 V IDD Supply Current — 50 90 µAPWM, T OVER are open SHDN Input VIH SHDN Input High Threshold 65 — — %VDD VIL SHDN Input Low Threshold — — 15 %VDD PWM Output VOL PWM Output Low Voltage — — 0.3 V ISINK =1mA VOH PWM Output High Voltage VDD -0.5 — — V ISOURCE =5mA tR PWM Rise Time — 10 — µsec IOH =5mA,1nF from PWM to GND tF PWM Fall Time — 10 — µsec IOL =1mA,1nF from PWM to GND fOUT PWM Frequency 10 15 — Hz tSTARTUP Start-up Time — 32/fOUT —sec VDD Rises from GND, or SHDN Released Temperature Accuracy TH ACC High Temperature Accuracy TH –3 TH TH +3 °C Note 1 (TH –TL) ACC Temp. Range Accuracy -1.0 — +1.0 °C(TH -TL) ≤ 20°C -2.5 — +2.5 °C(TH -TL) ≥ 20°C THYST Auto-shutdown Hysteresis — (TH -TL)/5 — °CTC651 Only TOVER Output VHIGH TOVER Output High Voltage VDD -0.5 — — V ISOURCE =1.2mA VLOW TOVER Output Low Voltage — — 0.4 V ISINK =2.5mA TOVER ACC Absolute Accuracy — TH +10 — °C At Trip Point TOVER HYST Trip Point Hysteresis — 5 — °C |
类似零件编号 - TC650EDVUA |
|
类似说明 - TC650EDVUA |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |