数据搜索系统,热门电子元器件搜索 |
|
3N60G-TF3T-T 数据表(PDF) 8 Page - Unisonic Technologies |
|
3N60G-TF3T-T 数据表(HTML) 8 Page - Unisonic Technologies |
8 / 9 page 3N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 8 of 9 www.unisonic.com.tw QW-R502-110.H TYPICAL CHARACTERISTICS(Cont.) Square Wave Pulse Duration, t1 (sec) Transient Thermal Response Curve Case Temperature, TC (°C) 75 100 0 125 50 25 1.0 1.5 2.0 2.5 3.0 Maximum Drain Current vs. Case Temperature 0.5 150 1 0.1 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Notes: 1. θJC (t) = 1.18 /W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 100 10-1 10-2 Drain-Source Voltage, VDS (V) 102 101 100 103 Safe Operating Area – 600V Notes: 1. TJ=25 2. TJ=150 3. Single Pulse DC 10ms 1ms 100µs Operation in This Area is Limited by RDS(on) 101 600 |
类似零件编号 - 3N60G-TF3T-T |
|
类似说明 - 3N60G-TF3T-T |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |