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LM3743 数据表(PDF) 2 Page - Texas Instruments |
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LM3743 数据表(HTML) 2 Page - Texas Instruments |
2 / 38 page VCC 1 SW 2 BOOT 3 LGATE 4 FB 5 HGATE 10 ILIM 9 GND 8 SS/TRACK 7 COMP/EN 6 LM3743 LM3743 SNVS427E – SEPTEMBER 2006 – REVISED APRIL 2013 www.ti.com Connection Diagram Figure 1. 10-Lead Plastic VSSOP (Top View) See Package Number DGS PIN DESCRIPTIONS Supply rail for the controller section of the IC. A minimum capacitance of 1 µF, preferably a multi-layer VCC (Pin 1) ceramic capacitor type (MLCC), must be connected as close as possible to the VCC and GND pin and a 1 to 4.99 Ω resistance must be connected in series from the supply rail to the Vcc pin. See VCC Filtering in the Design Consideration section for further details. Gate drive for the low-side N-channel MOSFET. This signal is interlocked with HGATE to avoid a shoot- LGATE (Pin 2) through problem. Power ground (PGND) and signal ground (SGND). Connect the bottom feedback resistor between this GND (Pin 3) pin and the feedback pin. Low side current limit threshold setting pin. This pin sources a fixed 50 µA current. A resistor of ILIM (Pin 4) appropriate value should be connected between this pin and the drain of the low-side N-FET. Feedback pin. This is the inverting input of the error amplifier used for sensing the output voltage and FB (Pin 5) compensating the control loop. Output of the error amplifier and enable pin. The voltage level on this pin is compared with an internally COMP/EN (Pin 6) generated ramp signal to determine the duty cycle. This pin is necessary for compensating the control loop. Forcing this pin to ground will shut down the IC. Soft-start and tracking pin. This pin is connected to the non-inverting input of the error amplifier during SS/TRACK (Pin 7) initial soft-start, or any time the voltage is below the reference. To track the rising ramp of another power supply's output, connect a resistor divider from the output of that supply to this pin as described in Application Information. Switch pin. The lower rail of the high-side N-FET driver. Also used for the high side current limit sensing. SW (Pin 8) Gate drive for the high-side N-channel MOSFET. This signal is interlocked with LGATE to avoid a shoot- HGATE (Pin 9) through problem. Supply rail for the N-channel MOSFET high gate drive. The voltage should be at least one gate BOOT (Pin 10) threshold above the regulator input voltage to properly turn on the high-side N-FET. See MOSFET GATE DRIVE in the Application Information section for more details on how to select MOSFETs. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Submit Documentation Feedback Copyright © 2006–2013, Texas Instruments Incorporated Product Folder Links: LM3743 |
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类似说明 - LM3743 |
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