BTA2008W-600D datasheet(8/14 Pages) PHILIPS

部件名	BTA2008W-600D

功能描述	3Q Hi-Com Triac

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制造商	PHILIPS [NXP Semiconductors]

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8 / 14 page

NXP Semiconductors

BTA2008W-600D

3Q Hi-Com Triac

BTA2008W-600D

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Product data sheet

14 August 2014

8 / 14

9. Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 9

0.25

-

5

mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 9

0.25

-

5

mA

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 9

0.25

-

5

mA

VD = 12 V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 10

-

10

mA

VD = 12 V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 10

-

20

mA

IL

latching current

VD = 12 V; IG = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 10

-

10

mA

IH

holding current

VD = 12 V; Tj = 25 °C; Fig. 11

-

10

mA

VT

on-state voltage

IT = 0.85 A; Tj = 25 °C; Fig. 12

-

1.35

1.6

V

VD = 12 V; IT = 0.1 A; Tj = 25 °C;

Fig. 12

-

0.9

1.5

V

VGT

gate trigger voltage

VD = 400 V; IT = 0.1 A; Tj = 125 °C;

Fig. 12

0.2

0.3

-

V

ID

off-state current

VD = 600 V; Tj = 125 °C

-

0.1

0.5

mA

Dynamic characteristics

dVD/dt

rate of rise of off-state

voltage

VDM = 402 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

200

-

V/µs

dIcom/dt

rate of change of

commutating current

VD = 400 V; Tj = 125 °C;

IT(RMS) = 0.8 A; dVcom/dt = 10 V/µs;

gate open circuit

0.5

-

A/ms

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