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93LC56-ISM 数据表(PDF) 7 Page - Microchip Technology |
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93LC56-ISM 数据表(HTML) 7 Page - Microchip Technology |
7 / 12 page 2004 Microchip Technology Inc. DS21712B-page 7 93LC46/56/66 2.7 Write The WRITE instruction is followed by 16 bits (or by 8 bits) of data which are written into the specified address. After the last data bit is put on the DI pin, CS must be brought low before the next rising edge of the CLK clock. This falling edge of CS initiates the self-timed auto-erase and programming cycle. The DO pin indicates the Ready/Busy status of the device if CS is brought high after a minimum of 250 ns low (TCSL) and before the entire write cycle is complete. DO at logical “0” indicates that programming is still in progress. DO at logical “1” indicates that the register at the specified address has been written with the data specified and the device is ready for another instruction. The write cycle takes 4 ms per word typical. 2.8 Erase All (ERAL) The ERAL instruction will erase the entire memory array to the logical “1” state. The ERAL cycle is identical to the ERASE cycle except for the different opcode. The ERAL cycle is completely self-timed and commences at the falling edge of the CS. Clocking of the CLK pin is not necessary after the device has entered the self clocking mode. The ERAL instruction is ensured at 5V ±10%. The DO pin indicates the Ready/Busy status of the device if CS is brought high after a minimum of 250 ns low (TCSL) and before the entire write cycle is complete. The ERAL cycle takes (8 ms typical). 2.9 Write All (WRAL) The WRAL instruction will write the entire memory array with the data specified in the command. The WRAL cycle is completely self-timed and commences at the falling edge of the CS. Clocking of the CLK pin is not necessary after the device has entered the self clock- ing mode. The WRAL command does include an auto- matic ERAL cycle for the device. Therefore, the WRAL instruction does not require an ERAL instruction but the chip must be in the EWEN status. The WRAL instruction is ensured at 5V ±10%. The DO pin indicates the Ready/Busy status of the device if CS is brought high after a minimum of 250 ns low (Tcsl). The WRAL cycle takes 16 ms typical. FIGURE 2-1: READ TIMING CS CLK DI DO 11 0 An ••• A0 High-Z 0 Dx ••• D0 Dx ••• D0 ••• Dx D0 |
类似零件编号 - 93LC56-ISM |
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类似说明 - 93LC56-ISM |
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