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2SC3648G-X-AB3-R 数据表(PDF) 2 Page - Unisonic Technologies |
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2SC3648G-X-AB3-R 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 5 page 2SC3648 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 5 www.unisonic.com.tw QW-R208-038.D ABSOLUTE MAXIMUM RATING (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 180 V Collector to Emitter Voltage VCEO 160 V Emitter to Base Voltage VEBO 6 V Collector Current IC 0.7 A Collector Current (Pulse) ICP 1.5 A Collector Dissipation PC 500 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC =10μA, IE =0 180 V Collector-Emitter Breakdown Voltage BVCEO IC =1, RBE =∞ 160 V Emitter-Base Breakdown Voltage BVEBO IE =10μA, IC=0 6 V Collector Cutoff Current ICBO VCB =120V, IE =0 0.1 μA Emitter Cutoff Current IEBO VEB =4V, IC =0 0.1 μA Collector-Emitter Saturation Voltage VCE(SAT) IC =250mA, IB =25mA 0.12 0.4 V Base-Emitter Saturation Voltage VBE(SAT) IC =250mA, IB =25mA 0.85 1.2 V Output Capacitance Cob VCB =10V, f =1MHz 8 pF DC Current Gain hFE1 VCE =5V, IC =100mA 100 400 hFE2 VCE =5V, IC =10mA 90 Turn-on Time tON See specified Test circuit 50 ns Storage Time tSTG See specified Test circuit 1000 ns Fall Time tF See specified Test circuit 60 ns Gain-Bandwidth Product fT VCE =5V, IC =50mA 120 MHz CLASSIFICATION OF hFE1 RANK R S T RANGE 100 ~ 200 140 ~ 280 200 ~ 400 |
类似零件编号 - 2SC3648G-X-AB3-R |
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类似说明 - 2SC3648G-X-AB3-R |
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