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2SC4793-X-TF3-T 数据表(PDF) 2 Page - Unisonic Technologies |
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2SC4793-X-TF3-T 数据表(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SC4793 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R219-009,B ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 230 V Collector-Emitter Voltage VCEO 230 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1 A Base Current IB 0.1 A Ta=25℃ 2.0 W Collector Power Dissipation TC=25℃ PC 20 W Junction Temperature TJ +150 ℃ Storage Temperature Range TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless others specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVCEO IC=10mA, IB=0 230 V Base -Emitter Voltage VBE VCE=5V, IC=500mA 1.0 V Collector-Emitter Saturation Voltage VCE(SAT) IC=500mA, IB=50mA 1.5 V Collector Cut-off Current ICBO VCB =230V, IE=0 1.0 µA Emitter Cut-off Current IEBO VEB=5V, IC=0 1.0 µA DC Current Gain hFE VCE=5V, IC=100mA 100 320 Transition Frequency fT VCE=10V, IC=100mA 100 MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF hFE RANK A B RANGE 100-200 180-320 |
类似零件编号 - 2SC4793-X-TF3-T |
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类似说明 - 2SC4793-X-TF3-T |
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