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BF1109 数据表(PDF) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1109 数据表(HTML) 7 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
7 / 16 page 1997 Dec 08 7 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR Fig.12 Input admittance as a function of frequency; typical values. VDS = 9 V; VG2-S =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MDA620 102 10−2 10 102 103 10−1 1 10 f (MHz) yis (mS) gis bis Fig.13 Reverse transfer admittance and phase as a function of frequency; typical values. VDS = 9 V; VG2-S =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MDA621 103 102 10 1 10 102 103 f (MHz) |yrs| (mS) ϕrs (deg) −103 −1 −10 −102 ϕrs |yrs| Fig.14 Forward transfer admittance and phase as a function of frequency; typical values. VDS = 9 V; VG2-S =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MDA622 102 ϕfs (deg) −102 −1 −10 10 1 10 102 103 f (MHz) |yfs| (mS) ϕfs |yfs| Fig.15 Output admittance as a function of frequency; typical values. VDS = 9 V; VG2-S =4V. ID = 12 mA; Tamb =25 °C. handbook, halfpage MDA623 10 1 10−1 10−2 10 102 103 f (MHz) yos (mS) bos gos |
类似零件编号 - BF1109_15 |
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类似说明 - BF1109_15 |
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