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CSD23382F4

SLPS453C – MAY 2014 – REVISED OCTOBER 2014

CSD23382F4 12 V P-Channel FemtoFET™ MOSFET

1 Features

Product Summary

1

•

Low On-Resistance

TYPICAL VALUE

UNIT

•

Drain-to-Source Voltage

–12

V

•

Ultra-Small Footprint (0402 Case Size)

Gate Charge Total (–4.5 V)

1.04

nC

Gate Charge Gate-to-Drain

0.15

nC

–

1.0 mm × 0.6 mm

149

•

Low Profile

Drain-to-Source On-Resistance

90

m

Ω

–

0.35 mm Max Height

66

•

Integrated ESD Protection Diode

Threshold Voltage

–0.8

V

–

Rated >2 kV HBM

–

Rated >2 kV CDM

Ordering Information(1)

•

Pb Terminal Plating

Device

Qty

Media

Package

Ship

CSD23382F4

3000

7-Inch Reel

Femto (0402)

•

Halogen Free

Tape and

1.0 mm × 0.6 mm

Reel

CSD23382F4T

250

7-Inch Reel

•

RoHS Compliant

Land Grid Array (LGA)

(1) For all available packages, see the orderable addendum at

2 Applications

the end of the data sheet.

•

Optimized for Load Switch Applications

.

•

Optimized for General Purpose Switching

Absolute Maximum Ratings

Applications

VALUE

UNIT

•

Battery Applications

Drain-to-Source Voltage

–12

V

Gate-to-Source Voltage

±8

V

•

Handheld and Mobile Applications

Continuous Drain Current(1)

–3.5

A

(2)

–22

A

3 Description

Continuous Gate Clamp Current

–35

This 66 m

Ω, 12 V P-channel FemtoFET™ MOSFET

mA

Pulsed Gate Clamp Current(2)

–350

is designed and optimized to minimize the footprint in

many

handheld

and

mobile

applications.

This

Power Dissipation(1)

500

mW

technology is capable of replacing standard small

Human Body Model (HBM)

2

kV

signal MOSFETs while providing at least a 60%

Charged Device Model (CDM)

2

kV

reduction in footprint size.

Operating Junction and

–55 to 150

°C

Storage Temperature Range

.

2

(0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4

Typical Part Dimensions

PCB.

(2) Pulse duration

≤100 μs, duty cycle ≤1%

Top View

.

.

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.