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MTB09N06I3 数据表(PDF) 4 Page - Cystech Electonics Corp. |
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MTB09N06I3 数据表(HTML) 4 Page - Cystech Electonics Corp. |
4 / 8 page CYStech Electronics Corp. Spec. No. : C912I3 Issued Date : 2015.05.30 Revised Date : 2015.06.01 Page No. : 4/ 8 MTB09N06I3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 30 60 90 120 150 180 012 345 VDS, Drain-Source Voltage(V) 10V,9V,8V,7V,6V VGS=3V 4V 3.5V 4.5V 5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 1 10 100 1000 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=10V VGS=3V VGS=4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02 46 8 1 IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 40 80 120 160 200 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0 0.5 1 1.5 2 2.5 3 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) VGS=10V, ID=20A RDSON@Tj=25°C : 7.6mΩ typ. VGS=4.5V, ID=20A RDS(ON)@Tj=25°C : 9.3mΩ typ. ID=20A VGS, Gate-Source Voltage(V) |
类似零件编号 - MTB09N06I3 |
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类似说明 - MTB09N06I3 |
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