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IRFAG40 数据表(PDF) 1 Page - International Rectifier |
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IRFAG40 数据表(HTML) 1 Page - International Rectifier |
1 / 7 page Absolute Maximum Ratings Parameter Units ID @ VGS = 0V, TC = 25°C Continuous Drain Current 3.9 ID @ VGS = 0V, TC = 100°C Continuous Drain Current 2.5 IDM Pulsed Drain Current ➀ 16 PD @ TC = 25°C Max. Power Dissipation 12 5 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ➁ 530 mJ IAR Avalanche Current ➀ 3.9 A EAR Repetitive Avalanche Energy ➀ 12.5 mJ dv/dt Peak Diode Recovery dv/dt ➂ 1.0 V/ns T J Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5(typical) g PD -90575 The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. o C A REPETITIVE AVALANCHE AND dv/dt RATED IRFAG40 HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) 01/24/01 www.irf.com 1 1000V, N-CHANNEL TO-3 Product Summary Part Number BVDSS RDS(on) ID IRFAG40 1000V 3.5 Ω 3.9Α Features: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling For footnotes refer to the last page |
类似零件编号 - IRFAG40 |
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类似说明 - IRFAG40 |
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