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74HC3GU04 数据表(PDF) 3 Page - NXP Semiconductors |
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74HC3GU04 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 17 page 74HC3GU04 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 5 — 2 October 2013 3 of 17 NXP Semiconductors 74HC3GU04 Triple unbuffered inverter 7. Functional description [1] H = HIGH voltage level; L = LOW voltage level. 8. Limiting values [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For TSSOP8 package: above 55 C the value of P tot derates linearly with 2.5 mW/K. For VSSOP8 package: above 110 C the value of P tot derates linearly with 8 mW/K. For XSON8 package: above 118 C the value of P tot derates linearly with 7.8 mW/K. 9. Recommended operating conditions Table 4. Function table [1] Input Output nA nY LH HL Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.5 +7.0 V IIK input clamping current VI < 0.5 V or VI >VCC + 0.5 V [1] - 20 mA IOK output clamping current VO < 0.5 V or VO >VCC +0.5 V [1] - 20 mA IO output current VO = 0.5 V to (VCC +0.5 V) [1] - 25 mA ICC quiescent supply current [1] -50 mA IGND ground current [1] 50 - mA Tstg storage temperature 65 +150 C Ptot total power dissipation Tamb = 40 C to +125 C [2] - 300 mW Table 6. Recommended operating conditions Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit VCC supply voltage 2.0 5.0 6.0 V VI input voltage 0 - VCC V VO output voltage 0 - VCC V Tamb ambient temperature 40 +25 +125 C t/V input transition rise and fall rate VCC = 2.0 V - - 625 ns/V VCC = 4.5 V - 1.67 139 ns/V VCC = 6.0 V - - 83 ns/V |
类似零件编号 - 74HC3GU04_15 |
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类似说明 - 74HC3GU04_15 |
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