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BYC30WT-600P 数据表(PDF) 2 Page - NXP Semiconductors |
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BYC30WT-600P 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 9 page NXP Semiconductors BYC30WT-600P Hyperfast power diode BYC30WT-600P All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved Product data sheet 10 February 2014 2 / 9 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode 2 K cathode 3 A anode mb mb mounting base; connected to cathode 3 2 1 TO-247 (SOT429) A 001aaa020 K 6. Ordering information Table 3. Ordering information Package Type number Name Description Version BYC30WT-600P TO-247 plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3 lead TO-247 SOT429 7. Marking Table 4. Marking codes Type number Marking code BYC30WT-600P BYC30WT-600P 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 600 V VRWM crest working reverse voltage - 600 V VR reverse voltage DC - 600 V IF(AV) average forward current δ = 0.5; Tmb ≤ 115 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 - 30 A IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 115 °C; square-wave pulse - 60 A |
类似零件编号 - BYC30WT-600P_15 |
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类似说明 - BYC30WT-600P_15 |
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