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IRLML9301PBF 数据表(PDF) 1 Page - International Rectifier |
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IRLML9301PBF 数据表(HTML) 1 Page - International Rectifier |
1 / 10 page 02/09/12 IRLML9301TRPbF HEXFET® Power MOSFET www.irf.com 1 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10 Micro3TM (SOT-23) IRLML9301TRPbF Features and Benefits Features Benefits S G 1 2 D 3 Application(s) • System/Load Switch VDS -30 V VGS Max ± 20 V RDS(on) max (@VGS = -10V) 64 m Ω RDS(on) max (@VGS = -4.5V) 103 m Ω Symbol Parameter Units VDS Drain-Source Voltage V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation Linear Derating Factor W/°C VGS Gate-to-Source Voltage V TJ, TSTG Junction and Storage Temperature Range °C Thermal Resistance Symbol Parameter Typ. Max. Units RθJA Junction-to-Ambient e ––– 100 RθJA Junction-to-Ambient (t<10s) f ––– 99 °C/W A Max. -3.6 -2.9 -55 to + 150 ± 20 0.01 -30 1.3 0.8 -15 W Low RDS(on) ( ≤ 64mΩ) Lower switching losses Industry-standard pinout Multi-vendor compatibility Compatible with existing Surface Mount Techniques results in Easier manufacturing RoHS compliant containing no lead, no bromide and no halogen ⇒ Environmentally friendly MSL1, Consumer qualification Increased reliability PD - 96310C |
类似零件编号 - IRLML9301PBF |
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类似说明 - IRLML9301PBF |
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