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IRLML2803PBF 数据表(PDF) 1 Page - International Rectifier |
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IRLML2803PBF 数据表(HTML) 1 Page - International Rectifier |
1 / 9 page Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with anextremelyefficientandreliabledeviceforuseinawidevariety ofapplications. Acustomizedleadframehasbeenincorporatedintothestandard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allowsittofiteasilyintoextremelythinapplicationenvironments such as portable electronics and PCMCIA cards. VDSS = 30V RDS(on) = 0.25Ω HEXFET® Power MOSFET Description l Generation V Technology l Ultra Low On-Resistance l N-ChannelMOSFET l SOT-23Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l Lead-Free l RoHS Compliant, Halogen-Free Absolute Maximum Ratings Parameter Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation mW Linear Derating Factor mW/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy g mJ dv/dt Peak diode Recovery dv/dt d V/ns TJ ,TSTG Junction and Storage Temperature Range °C Thermal Resistance Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient f ––– 230 °C/W 3.9 A 5.0 540 4.3 ±20 Max. 1.2 0.93 7.3 -55 to + 150 D S G 3 1 2 Micro3 ™ IRLML2803PbF Form Quantity IRLML2803TRPbF Micro3™ (SOT-23) Tape and Reel 3000 IRLML2803TRPbF Package Type Standard Pack Orderable Part Number Base Part Number 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 |
类似零件编号 - IRLML2803PBF |
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类似说明 - IRLML2803PBF |
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