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IRLI530NPBF 数据表(PDF) 2 Page - International Rectifier

部件名 IRLI530NPBF
功能描述  ADVANCED PROCESS TECHNOLOGY
Download  9 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRLI530NPBF 数据表(HTML) 2 Page - International Rectifier

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IRLI530NPbF
2
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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.122 ––– V/°C Reference to 25°C, ID = 1mA†
–––
––– 0.100
VGS = 10V, ID = 9.0A „
–––
––– 0.120
VGS = 5.0V, ID = 9.0A „
–––
––– 0.150
VGS = 4.0V, ID = 8.0A „
VGS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
7.7
––– –––
S
VDS = 50V, ID = 9.0A†
–––
–––
25
µA
VDS = 100V, VGS = 0V
–––
––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
nA
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -100
VGS = -16V
Qg
Total Gate Charge
–––
–––
34
ID = 9.0A
Qgs
Gate-to-Source Charge
–––
–––
4.8
nC
VDS = 80V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
20
VGS = 5.0V, See Fig. 6 and 13 „†
td(on)
Turn-On Delay Time
–––
7.2 –––
VDD = 50V
tr
Rise Time
–––
53
–––
ns
ID = 9.0A
td(off)
Turn-Off Delay Time
–––
30
–––
RG = 6.0Ω, VGS = 5.0V
tf
Fall Time
–––
26
–––
RD = 5.5Ω, See Fig. 10 „†
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
800 –––
VGS = 0V
Coss
Output Capacitance
–––
160 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
90
–––
ƒ = 1.0MHz, See Fig. 5†
C
Drain to Sink Capacitance
–––
12
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
S
D
G
LD
Internal Drain Inductance
––– 4.5
–––
LS
Internal Source Inductance
––– 7.5
–––
RDS(on)
Static Drain-to-Source On-Resistance
nH
pF
S
D
G
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 3.1mH
RG = 25Ω, IAS = 9.0A. (See Figure 12)
… t=60s, ƒ=60Hz
ƒ I
SD ≤ 9.0A, di/dt ≤ 540A/µs, V
DD ≤ V(BR)DSS,
TJ ≤ 175°C
† Uses IRL530N data and test conditions
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) †
––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– ––– 1.3
V
TJ = 25°C, IS = 6.6A, VGS = 0V „
trr
Reverse Recovery Time
––– 140 210
ns
TJ = 25°C, IF = 9.0A
Qrr
Reverse RecoveryCharge
––– 740 1100
nC
di/dt = 100A/µs „†
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
A
12
60


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