数据搜索系统,热门电子元器件搜索 |
|
IRLB3813PBF 数据表(PDF) 1 Page - International Rectifier |
|
IRLB3813PBF 数据表(HTML) 1 Page - International Rectifier |
1 / 9 page www.irf.com 1 07/03/09 IRLB3813PbF HEXFET® Power MOSFET Notes through are on page 9 GD S Gate Drain Source PD - 97407 TO-220AB S D G D Applications Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools VDSS RDS(on) max Qg (typ.) 30V 1.95m Ω@VGS = 10V 57nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation g PD @TC = 100°C Maximum Power Dissipation g Linear Derating Factor W/°C TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case g ––– 0.64 RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– RθJA Junction-to-Ambient f ––– 62 V °C °C/W W A 1.6 120 10lb xin (1.1Nxm) -55 to + 175 300 (1.6mm from case) 230 Max. 260 h 1050 ± 20 30 190 h |
类似零件编号 - IRLB3813PBF_15 |
|
类似说明 - IRLB3813PBF_15 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |