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IRL60B216 数据表(PDF) 2 Page - International Rectifier

部件名 IRL60B216
功能描述  Brushed Motor drive applications
Download  10 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRL60B216 数据表(HTML) 2 Page - International Rectifier

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© 2015 International Rectifier
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April 29, 2015
 
IRL60B216
Notes:

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that

Current imitations arising from heating of the device leads may occur with some lead mounting arrangements.

(Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.107mH, RG = 50, IAS = 100A, VGS =10V.

ISD  100A, di/dt  1420A/µs, VDD  V(BR)DSS, TJ  175°C.

Pulse width
 400µs; duty cycle  2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 46A, VGS =10V.
Pulse drain current is limited to 780A by source bonding technology.
Absolute Maximum Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
305
A  
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
215
IDM
Pulsed Drain Current 
780
PD @TC = 25°C
Maximum Power Dissipation
375
W
Linear Derating Factor
2.5
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
 
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
530
mJ
EAS (Thermally limited)
Single Pulse Avalanche Energy 
1045
IAR
Avalanche Current 
See Fig 15, 16, 23a, 23b
A
EAR
Repetitive Avalanche Energy 
mJ
Thermal Resistance  
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case 
–––
0.4
°C/W  
RCS
Case-to-Sink, Flat Greased Surface
0.50
–––
RJA
Junction-to-Ambient 
–––
62
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
195
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
––– 0.041 –––
V/°C
Reference to 25°C, ID = 2mA 
RDS(on)
–––
1.5
1.9
m

VGS = 10V, ID = 100A 
–––
1.7
2.2
VGS = 4.5V, ID = 50A 
VGS(th)
Gate Threshold Voltage
1.0
–––
2.4
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
VDS = 60 V, VGS = 0V
–––
–––
150
VDS = 60V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Gate Resistance
–––
2.0
–––

Static Drain-to-Source On-Resistance


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