数据搜索系统,热门电子元器件搜索 |
|
IRL60B216 数据表(PDF) 2 Page - International Rectifier |
|
IRL60B216 数据表(HTML) 2 Page - International Rectifier |
2 / 10 page 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 29, 2015 IRL60B216 Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that Current imitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.107mH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 1420A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 46A, VGS =10V. Pulse drain current is limited to 780A by source bonding technology. Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 305 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 215 IDM Pulsed Drain Current 780 PD @TC = 25°C Maximum Power Dissipation 375 W Linear Derating Factor 2.5 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 530 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 1045 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.4 °C/W RCS Case-to-Sink, Flat Greased Surface 0.50 ––– RJA Junction-to-Ambient ––– 62 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.041 ––– V/°C Reference to 25°C, ID = 2mA RDS(on) ––– 1.5 1.9 m VGS = 10V, ID = 100A ––– 1.7 2.2 VGS = 4.5V, ID = 50A VGS(th) Gate Threshold Voltage 1.0 ––– 2.4 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 60 V, VGS = 0V ––– ––– 150 VDS = 60V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.0 ––– Static Drain-to-Source On-Resistance |
类似零件编号 - IRL60B216 |
|
类似说明 - IRL60B216 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |