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BAP51-02_N 数据表(PDF) 3 Page - NXP Semiconductors |
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BAP51-02_N 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 6 page NXP Semiconductors Product specification General purpose PIN diode BAP51-02 GRAPHICAL DATA handbook, halfpage MGS322 10 2 5 1 10−1 110 IF (mA) r D ( Ω) Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 020 VR (V) Cd (fF) 500 0 100 MGS323 200 300 400 4 8 12 16 Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 0.5 3 0 |s21| 2 (dB) −2.5 −2 MGT264 −1.5 −1 −0.5 1 1.5 2 2.5 f (GHz) (1) (2) (3) Fig.4 Insertion loss ( |s21|2) of the diode as a function of frequency; typical values. (1) IF = 10 mA. (2) IF = 1 mA. (3) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. handbook, halfpage 0.5 3 0 |s21| 2 (dB) −25 −20 MGT265 −15 −10 −5 1 1.5 2 2.5 f (GHz) Fig.5 Isolation ( |s21|2) of the diode as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. Rev. 03 - 2 January 2008 3 of 6 |
类似零件编号 - BAP51-02_N_15 |
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类似说明 - BAP51-02_N_15 |
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