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1PS76SB10_15 数据表(PDF) 3 Page - NXP Semiconductors |
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1PS76SB10_15 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 8 page NXP Semiconductors 1PS76SB10 Schottky barrier single diode 1PS76SB10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 17 December 2012 3 / 8 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit IF = 0.1 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C - - 240 mV IF = 1 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C - - 320 mV IF = 10 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C - - 400 mV IF = 30 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C - - 500 mV VF forward voltage IF = 100 mA; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C - - 800 mV IR reverse current VR = 25 V; pulsed; tp = 300 µs; δ = 0.02 ; Tamb = 25 °C - - 2 µA Cd diode capacitance VR = 1 V; f = 1 MHz; Tamb = 25 °C - - 10 pF 006aac829 VF (V) 0.0 1.2 0.8 0.4 1 10 102 103 IF (mA) 10-1 (1) (1) (2) (2) (3) (3) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig. 1. Forward current as a function of forward voltage; typical values aaa-004515 VR (V) 0 30 20 10 1 10 102 103 IR (µA) 10-1 (1) (2) (3) (1) Tamb = 125 °C (2) Tamb = 85 °C (3) Tamb = 25 °C Fig. 2. Reverse current as a function of reverse voltage; typical values |
类似零件编号 - 1PS76SB10_15_15 |
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类似说明 - 1PS76SB10_15_15 |
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