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IRFP4229PBF 数据表(PDF) 4 Page - International Rectifier |
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IRFP4229PBF 数据表(HTML) 4 Page - International Rectifier |
4 / 8 page IRFP4229PbF 4 www.irf.com Fig 11. Maximum Drain Current vs. Case Temperature Fig 8. Typical Source-Drain Diode Forward Voltage Fig 12. Maximum Safe Operating Area Fig 7. Typical EPULSE vs.Temperature Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage Fig 9. Typical Capacitance vs.Drain-to-Source Voltage 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 0.1 1 10 100 1000 TJ = 25°C TJ = 175°C VGS = 0V 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0 1000 2000 3000 4000 5000 6000 7000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 20 40 60 80 100 120 QG Total Gate Charge (nC) 0 4 8 12 16 20 VDS= 160V VDS= 100V VDS= 40V ID= 26A 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) 0 10 20 30 40 50 25 50 75 100 125 150 Temperature (°C) 0 400 800 1200 1600 2000 L = 220nH C= 0.3µF C= 0.2µF C= 0.1µF 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 1000 Tc = 25°C Tj = 175°C Single Pulse 1µsec 10µsec OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec |
类似零件编号 - IRFP4229PBF |
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类似说明 - IRFP4229PBF |
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