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KDV273UL 数据表(PDF) 1 Page - KEC(Korea Electronics) |
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KDV273UL 数据表(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2007. 5. 16 1/2 SEMICONDUCTOR TECHNICAL DATA KDV273UL Revision No : 0 VCO FOR UHF/VHF BAND. FEATURES ・High Capacitance Ratio : C 1V/C4V =2.0(Typ.) ・Low Series Resistance : r s=0.39Ω(Typ.) MAXIMUM RATING (Ta=25 ℃) ULP-2 B A DIM MILLIMETERS A B C C D D E E E 1.0 0.05 0.6 0.05 0.36 0.65 0.03 G G H H H + _ + _ 0.5 0.03 + _ + _ 0.05 0.25 0.03 + _ +0.02 - 0.03 1. ANODE 2. CATHODE ELECTRICAL CHARACTERISTICS (Ta=25 ℃) VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE Type Name Marking VB CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ～150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=1μ A 10 - - V Reverse Current IR VR=10V - - 10 nA Capacitance C1V VR=1V, f=1MHz 15 16 17 pF C4V VR=4V, f=1MHz 7.3 8.0 8.7 Capacitance Ratio K - 1.8 2.0 - Series Resistance rS VR=1V, f=470MHz - 0.39 0.5 Ω |
类似零件编号 - KDV273UL_15 |
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类似说明 - KDV273UL_15 |
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