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KDS114V 数据表(PDF) 1 Page - KEC(Korea Electronics) |
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KDS114V 数据表(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 2 page  2005. 3. 28 1/2 SEMICONDUCTOR TECHNICAL DATA KDS114V SILICON EPITAXIAL PLANAR DIODE Revision No : 0 VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ・Small Package. ・Small Total Capacitance : C T=1.2pF(Max.). ・Low Series Resistance : r S=0.5Ω(Typ.). MAXIMUM RATING (Ta=25 ℃) VSC DIM MILLIMETERS A B C D E 1.4 0.05 CATHODE MARK B A F 1.0 0.05 0.6 0.05 0.28 0.03 0.5 0.05 0.12 0.03 2 1 1. ANODE 2. CATHODE ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 35 V Forward Current IF 100 mA Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ～150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=2mA - - 0.85 V Reverse Current IR VR=15V - - 0.1 μA Reverse Voltage VR IR=1μ A 35 - - V Total Capacitance CT VR=6V, f=1MHz - 0.7 1.2 pF Series Resistance rs IF=2mA, f=100MHz - 0.5 0.9 Ω Type Name Marking P 1 |
类似说明 - KDS114V_15 |
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