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IRF9952PBF 数据表(PDF) 1 Page - International Rectifier |
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IRF9952PBF 数据表(HTML) 1 Page - International Rectifier |
1 / 10 page N-Channel P-Channel Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TA = 25°C 3.5 -2.3 TA = 70°C 2.8 -1.8 Pulsed Drain Current IDM 16-1 0 Continuous Source Current (Diode Conduction) IS 1.7 -1.3 TA = 25°C 2.0 TA = 70°C 1.3 Single Pulse Avalanche Energy EAS 44 57 mJ Avalanche Current IAR 2.0 -1.3 A Repetitive Avalanche Energy EAR 0.25 mJ Peak Diode Recovery dv/dt dv/dt 5.0 -5.0 V/ ns Junction and Storage Temperature Range TJ,TSTG -55 to + 150 °C HEXFET® Power MOSFET PD - 95135 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of powerapplications. Withtheseimprovements,multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free IRF9952PbF Description Thermal Resistance Ratings Parameter Symbol Limit Units Maximum Junction-to-Ambient RθJA 62.5 °C/W Continuous Drain Current Maximum Power Dissipation A ID PD V W Symbol Maximum Units D1 N-CHANNEL MOSFET P-CHANNEL MOSFET D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 N-Ch P-Ch VDSS 30V -30V RDS(on) 0.10Ω 0.25Ω Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 www.irf.com 1 09/15/04 |
类似零件编号 - IRF9952PBF |
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类似说明 - IRF9952PBF |
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