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IRF9395MPBF 数据表(PDF) 7 Page - International Rectifier |
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IRF9395MPBF 数据表(HTML) 7 Page - International Rectifier |
7 / 9 page 7 © 2014 International Rectifier Submit Datasheet Feedback February 24, 2014 IRF9395MPbF Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * Inductor Current Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer • di/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - + + + - - - RG VDD D.U.T DirectFET Board Footprint, MC Outline (Medium Size Can, C-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE G D S G S SS DD D Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ |
类似零件编号 - IRF9395MPBF_15 |
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类似说明 - IRF9395MPBF_15 |
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