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IRF9333PBF 数据表(PDF) 2 Page - International Rectifier

部件名 IRF9333PBF
功能描述  Industry-Standard SO8 Package
Download  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF9333PBF 数据表(HTML) 2 Page - International Rectifier

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IRF9333PbF
2
www.irf.com
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 3.5mH, RG = 25Ω, IAS = -7.5A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
G
D
S
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.019
–––
V/°C
RDS(on)
–––
15.6
19.4
–––
25.6
32.5
VGS(th)
Gate Threshold Voltage
-1.3
-1.8
-2.4
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-5.7
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
-1.0
–––
–––
-150
IGSS
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
gfs
Forward Transconductance
13
–––
–––
S
Qg
Total Gate Charge
h
–––14–––
nC
VDS = -15V, VGS = -4.5V, ID = - 7.5A
Qg
Total Gate Charge
h
–––
25
38
Qgs
Gate-to-Source Charge
h
–––
3.5
–––
Qgd
Gate-to-Drain Charge
h
–––
6.4
–––
RG
Gate Resistance
h
–––15–––
Ω
td(on)
Turn-On Delay Time
–––
16
–––
tr
Rise Time
–––44–––
td(off)
Turn-Off Delay Time
–––
55
–––
tf
Fall Time
–––49–––
Ciss
Input Capacitance
–––
1110
–––
Coss
Output Capacitance
–––
230
–––
Crss
Reverse Transfer Capacitance
–––
160
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
-1.2
V
trr
Reverse Recovery Time
–––
24
36
ns
Qrr
Reverse Recovery Charge
–––
15
23
nC
Thermal Resistance
Parameter
Units
RθJL
Junction-to-Drain Lead
g
RθJA
Junction-to-Ambient
f
Conditions
See Figs. 20a &20b
Max.
100
-7.5
ƒ = 1.0MHz
VGS = 0V
VDS = -25V
VDS = -24V, VGS = 0V
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -9.2A e
VDS = VGS, ID = -25μA
VGS = -4.5V, ID = -7.5A
e
m
Ω
μA
TJ = 25°C, IF = -2.5A, VDD = -24V
di/dt = 100A/μs
e
TJ = 25°C, IS = -2.5A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
ID = -7.5A
RG = 6.8Ω
VDS = -10V, ID = -7.5A
VDS = -24V, VGS = 0V, TJ = 125°C
VDD = -15V, VGS = -4.5V e
ID = -1.0A
VDS = -15V
VGS = -20V
VGS = 20V
VGS = -10V
ns
pF
–––
Typ.
–––
Static Drain-to-Source On-Resistance
A
–––
–––
–––
–––
-2.5
-75
nA
nC
°C/W
Max.
20
50
Typ.
–––
–––


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