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IRF7862PBF 数据表(PDF) 1 Page - International Rectifier |
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IRF7862PBF 数据表(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 06/04/09 IRF7862PbF HEXFET® Power MOSFET Notes through
are on page 9 Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg l Lead-Free Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A SO-8 VDSS RDS(on) max Qg 30V 3.3m:@VGS = 10V 30nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead g ––– 20 RθJA Junction-to-Ambient f ––– 50 °C/W V A W °C -55 to + 150 2.5 0.02 1.6 Max. 21 17 170 ± 20 30 PD - 97275B |
类似零件编号 - IRF7862PBF |
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类似说明 - IRF7862PBF |
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