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IRF7854PBF 数据表(PDF) 2 Page - International Rectifier

部件名 IRF7854PBF
功能描述  Secondary Side Synchronous Rectification Switch for 12Vout
Download  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF7854PBF 数据表(HTML) 2 Page - International Rectifier

  IRF7854PBF Datasheet HTML 1Page - International Rectifier IRF7854PBF Datasheet HTML 2Page - International Rectifier IRF7854PBF Datasheet HTML 3Page - International Rectifier IRF7854PBF Datasheet HTML 4Page - International Rectifier IRF7854PBF Datasheet HTML 5Page - International Rectifier IRF7854PBF Datasheet HTML 6Page - International Rectifier IRF7854PBF Datasheet HTML 7Page - International Rectifier IRF7854PBF Datasheet HTML 8Page - International Rectifier  
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IRF7854PbF
2
www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
80
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.095
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
11
13.4
m
VGS(th)
Gate Threshold Voltage
3.0
–––
4.9
V
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
12
–––
–––
S
Qg
Total Gate Charge
–––
27
41
Qgs
Gate-to-Source Charge
–––
7.7
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.7
–––
td(on)
Turn-On Delay Time
–––
9.4
–––
tr
Rise Time
–––
8.5
–––
td(off)
Turn-Off Delay Time
–––
15
–––
ns
tf
Fall Time
–––
8.6
–––
Ciss
Input Capacitance
–––
1620
–––
Coss
Output Capacitance
–––
350
–––
Crss
Reverse Transfer Capacitance
–––
86
–––
pF
Coss
Output Capacitance
–––
1730
–––
Coss
Output Capacitance
–––
230
–––
Coss eff.
Effective Output Capacitance
–––
410
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
2.3
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
79
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
43
65
ns
Qrr
Reverse Recovery Charge
–––
76
110
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typ.
–––
–––
Conditions
VDS = 25V, ID = 6.0A
ID = 6.0A
VDS = 40V
Conditions
VGS = 10V f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
110
6.0
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 6.0A, VGS = 0V f
TJ = 25°C, IF = 6.0A, VDD = 25V
di/dt = 100A/µs
f
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 10A f
VDS = VGS, ID = 100µA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
Max.
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V g
VGS = 10V f
VDD = 40V
ID = 6.0A
RG = 6.2Ω


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