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IRF7805PBF 数据表(PDF) 1 Page - International Rectifier |
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IRF7805PBF 数据表(HTML) 1 Page - International Rectifier |
1 / 5 page • N Channel Application Specific MOSFETs • Ideal for Mobile DC-DC Converters • Low Conduction Losses • Low Switching Losses • Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters. HEXFET® Chip-Set for DC-DC Converters Top V iew 8 1 2 3 4 5 6 7 D D D D G S A S S Device Features IRF7805PbF www.irf.com 1 01/09/08 SO-8 Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation e W PD @TA = 70°C Power Dissipation e Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead g ––– 20 °C/W RθJA Junction-to-Ambient eg ––– 50 Max. 13 10 100 ± 12 30 -55 to + 150 2.5 0.02 1.6 IRF7805PbF VDS 30V RDS(on) 11m Ω Qg 31nC Qsw 11.5nC Qoss 36nC PD – 96031A |
类似零件编号 - IRF7805PBF_15 |
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类似说明 - IRF7805PBF_15 |
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