DirectFET

™ Power MOSFET ‚

Typical values (unless otherwise specified)

DirectFET

™ ISOMETRIC

L8

Applicable DirectFET Outline and Substrate Outline

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Primary Switch Socket

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Description

layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application

note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer

in power systems.

The IRF7799L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device

coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and

makes this device ideal for high performance power converters.

Fig 1. Typical On-Resistance vs. Gate Voltage

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ƒ Surface mounted on 1 in. square Cu board, steady state.

Notes:

Fig 2. Typical On-Resistance vs. Drain Current

SB

SC

M2

M4

L4

L6

L8

250V min ± 30V max 32mΩ@ 10V

110nC

39nC

4.0V

4

8

12

16

20

VGS, Gate -to -Source Voltage (V)

20

40

60

80

100

120

140

160

180

200

ID = 21A

TJ = 25°C

TJ = 125°C

0

20

40

60

80

100

ID, Drain Current (A)

25

30

35

40

45

50

55

60

TJ = 25°C

Vgs = 7.0V

Vgs = 8.0V

Vgs = 10V

Vgs = 15V

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

Gate-to-Source Voltage

Pulsed Drain Current

g

Single Pulse Avalanche Energy

h

mJ

Avalanche Current

Ãg

A

375

325

Max.

25

6.6

140

±30

250

35

21

V

A

D

S

G

D

S

S

S

S

S

S

S

IRF7799L2PbF

1

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February 24, 2014

Form

Quantity

IRF7799L2TRPbF

DirectFET2 Large Can

Tape and Reel

4000

"TR" suffix

IRF7799L2TR1PbF

DirectFET2 Large Can

Tape and Reel

1000

"TR1" suffix EOL notice # 264

Note

Orderable part number

Package Type

Standard Pack