The RF MOSFET Line

RF Power

Field Effect Transistor

N–Channel Enhancement Mode MOSFET

Designed for broadband commercial and military applications up to 200 MHz

frequency range. The high–power, high–gain and broadband performance of

this device makes possible solid state transmitters for FM broadcast or TV

channel frequency bands.

• Guaranteed Performance at 150 MHz, 28 V:

Output Power = 80 W

Gain = 11 dB (13 dB Typ)

Efficiency = 55% Min. (60% Typ)

• Low Thermal Resistance

• Ruggedness Tested at Rated Output Power

• Nitride Passivated Die for Enhanced Reliability

• Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz

• Excellent Thermal Stability; Suited for Class A Operation

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

65

Vdc

Drain–Gate Voltage

65

Vdc

Gate–Source Voltage

±40

Vdc

Drain Current — Continuous

9.0

Adc

Derate above 25

°C

220

1.26

Watts

W/

°C

Storage Temperature Range

–65 to +150

°C

Operating Temperature Range

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.8

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

65

—

—

V

—

—

2.0

mA

—

—

1.0

µA

ON CHARACTERISTICS

1.0

3.0

6.0

V

—

—

1.4

V

1.8

2.2

—

mhos

(continued)

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

MRF173CQ

80 W, 28 V, 175 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 316–01, STYLE 2

D

S

G

Order this document

by MRF173CQ/D

SEMICONDUCTOR TECHNICAL DATA

1

REV 0