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IRF100B201 数据表(PDF) 1 Page - International Rectifier |
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IRF100B201 数据表(HTML) 1 Page - International Rectifier |
1 / 12 page HEXFET® Power MOSFET D S G Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant, Halogen-Free VDSS 100V RDS(on) typ. 3.5m max 4.2m ID (Silicon Limited) 192A TO-220AB IRF100B201 S D G G D S Gate Drain Source Base part number Package Type Standard Pack Form Quantity IRF100B201 TO-220 Tube 50 IRF100B201 Orderable Part Number IRF100S201 D2-Pak Tape and Reel 800 IRF100S201 StrongIRFET™ IRF100B201 IRF100S201 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On– Resistance vs. Gate Voltage S D G D2-Pak IRF100S201 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 26, 2015 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0 40 80 120 160 200 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) 2 4 6 8 10 12 14 16 18 20 ID = 115A TJ = 25°C TJ = 125°C |
类似零件编号 - IRF100B201 |
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类似说明 - IRF100B201 |
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