CS18B

CS18D

CS18M

CS18N

SILICON CONTROLLED RECTIFIER

1 AMP, 200 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS18B series

types are hermetically sealed silicon controlled

rectifiers manufactured in a TO-18 case, designed for

control systems and sensing circuit applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

CS18B

CS18D

CS18M

CS18N

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

200

400

600

800

V

RMS On-State Current (TC=90°C)

IT(RMS)

1.0

A

Nonrept. On-State Current

ITSM

10

A

Fusing Current (t=10ms)

0.24

Peak Gate Current (t=10μs)

IGM

1.0

A

Peak Gate Dissipation (t=10μs)

PGM

2.0

W

Gate Dissipation

PG(AV)

0.1

W

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-40 to +150

°C

Thermal Resistance

ΘJC

32

°C/W

Thermal Resistance

ΘJA

200

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM

Rated VDRM, VRRM, RGK=1.0KΩ

1.0

μA

IDRM, IRRM

Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C

0.1

mA

VTM

IT=2.0A

1.6

2.15

V

IGT

VD=12V, RL=10Ω

20

200

μA

VGT

VD=12V, RL=10Ω

0.65

0.8

V

IH

RGK=1.0KΩ

0.5

5.0

mA

dv/dt

VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C

25

V/μs

TO-18 CASE

R2 (18-January 2010)

www.centra lsemi.com