2N3819

SILICON

N-CHANNEL JFET

The CENTRAL SEMICONDUCTOR 2N3819 is a silicon

N-Channel JFET designed for RF amplifier and mixer

applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Drain-Gate Voltage

VDG

25

V

Drain-Source Voltage

VDS

25

V

Gate-Source Voltage

VGS

25

V

Continuous Gate Current

IG

10

mA

Power Dissipation

PD

360

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

IGSS

VGS=15V

2.0

nA

IGSS

VGS=15V, TA=100°C

2.0

μA

IDSS

VDS=15V

2.0

20

mA

BVGSS

IG=1.0μA

25

V

VGS(OFF)

VDS=15V, ID=2.0nA

8.0

V

VGS

VDS=15V, ID=200μA

0.5

7.5

V

VDS=15V, VGS=0, f=1.0MHz

2.0

6.5

mS

VDS=15V, VGS=0, f=100MHz

1.6

mS

VDS=15V, VGS=0, f=1.0kHz

50

μS

Ciss

VDS=15V, VGS=0, f=1.0MHz

8.0

pF

Crss

VDS=15V, VGS=0, f=1.0MHz

4.0

pF

TO-92 CASE

R1 (9-January 2014)

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