CZT5551HC

SURFACE MOUNT

HIGH CURRENT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CZT5551HC type

is a high current NPN silicon transistor manufactured

by the epitaxial planar process, epoxy molded in a

surface mount package, designed for high voltage and

high current amplifier applications.

MARKING: FULL PART NUMBER

SOT-223 CASE

SOT-223 CASE

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

180

V

Collector-Emitter Voltage

VCEO

160

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

1.0

A

Power Dissipation

PD

2.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

62.5

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICBO

VCB=120V

50

nA

ICBO

VCB=120V, TA=100°C

50

µA

IEBO

VEB=4.0V

50

nA

BVCBO

IC=100µA

180

V

BVCEO

IC=1.0mA

160

V

BVEBO

IE=10µA

6.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.15

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.20

V

VBE(SAT)

IC=10mA, IB=1.0mA

1.00

V

VBE(SAT)

IC=50mA, IB=5.0mA

1.00

V

hFE

VCE=5.0V, IC=1.0mA

80

hFE

VCE=5.0V, IC=10mA

80

250

hFE

VCE=5.0V, IC=50mA

30

hFE

VCE=10V, IC=1.0A

10

fT

VCE=10V, IC=10mA, f=100MHz

100

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

15

pF

R1 (1-March 2010)

www.centra lsemi.com