SMB1N-670D datasheet(1/4 Pages) ROITHNER

部件名	SMB1N-670D

功能描述	red high power led

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制造商	ROITHNER [Roithner LaserTechnik GmbH]

网页	http://www.roithner-laser.com

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SMB1N-670D

v 1.0 11.06.2014

Description

SMB1N-670D is a surface mount AlGaInP High Power LED with a typical peak wavelength of 670 nm

and radiation of 250 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free

solderable), copper heat sink, and molded with silicone resin.

Maximum Ratings (T

CASE=25°C)

Parameter

Symbol

Values

Min.

Max.

Unit

Power Dissipation

PD

1500

mW

Forward Current

IF

500

mA

Pulse Forward Current *

1

IFP

1000

mA

Reverse Voltage

VF

5

V

Thermal Resistance

RTHJA

10

K/W

Junction Temperature

TJ

100

°C

Operating Temperature

TCASE

- 40

+ 85

°C

Storage Temperature

TSTG

- 40

+ 100

°C

Lead Solder Temperature *

2

TSLD

+ 250

°C

*

1 duty=1%, pulse width = 10 µs

*

2 must be completed within 5 seconds

Electro-Optical Characteristics (T

CASE=25°C)

*

1 measured by S3584-08

*

2 measured by Tektronix J-6512

Parameter

Symbol Conditions

Values

Min.

Typ.

Max.

Unit

Peak Wavelength

λP

IF=350mA

660

670

680

nm

Half Width

∆λ

IF=350mA

16

nm

Forward Voltage

VF

IF=350mA

2.3

3.0

V

VFP

IFP=1A

2.7

Radiated Power *

1

PO

IF=350mA

250

mW

IFP=1A

710

Radiant Intensity *

2

IE

IF=350mA

110

mW/sr

IFP=1A

310

Viewing Angle

φ

IF=100mA

124

deg.

Rise Time

tR

IF=350mA

90

ns

Fall Time

tF

IF=350mA

90

ns

类似零件编号 - SMB1N-670D

制造商	部件名	数据表	功能描述
Roithner LaserTechnik G...	SMB1N-670D-02	815Kb / 4P	red high power led

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