2N3700

2N3701

SILICON

NPN TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701

are silicon NPN transistors designed for high current

general purpose applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

140

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

7.0

V

Continuous Collector Current

IC

1.0

A

Power Dissipation (TC=25°C)

PD

1.8

W

Power Dissipation

PD

500

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJA

350

°C/W

Thermal Resistance

ΘJC

97.2

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

2N3700

2N3701

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=90V

-

10

-

10

nA

ICBO

VCB=90V, TA=150°C

-

10

-

10

μA

IEBO

VEB=5.0V

-

10

-

10

nA

BVCBO

IC=100μA

140

-

140

-

V

BVCEO

IC=30mA

80

-

80

-

V

BVEBO

IE=100μA

7.0

-

7.0

-

V

VCE(SAT)

IC=150mA, IB=15mA

-

0.2

-

0.2

V

VCE(SAT)

IC=500mA, IB=50mA

-

0.5

-

0.5

V

VBE(SAT)

IC=150mA, IB=15mA

-

1.1

-

1.1

V

hFE

VCE=10V, IC=0.1mA

50

-

30

100

hFE

VCE=10V, IC=10mA

90

-

40

120

hFE

VCE=10V, IC=150mA

100

300

40

120

hFE

VCE=10V, IC=150mA, TA=-55°C

40

-

-

-

hFE

VCE=10V, IC=500mA

50

-

30

100

hFE

VCE=10V, IC=1.0A

15

-

15

-

TO-18 CASE

R1 (4-March 2014)

www.centr a lsemi.com