2N3019

2N3020

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3019, 2N3020

types are NPN silicon transistors designed for general

purpose amplifier applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

140

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

7.0

V

Continuous Collector Current

IC

1.0

A

Power Dissipation

PD

0.8

W

Power Dissipation (TC=25°C)

PD

5.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

2N3019

2N3020

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=90V

-

10

-

10

nA

ICBO

VCB=90V, TA=150°C

-

10

-

10

μA

IEBO

VEB=5.0V

-

10

-

10

nA

BVCBO

IC=100μA

140

-

140

-

V

BVCEO

IC=30mA

80

-

80

-

V

BVEBO

IE=100μA

7.0

-

7.0

-

V

VCE(SAT)

IC=150mA, IB=15mA

-

0.2

-

0.2

V

VCE(SAT)

IC=500mA, IB=50mA

-

0.5

-

0.5

V

VBE(SAT)

IC=150mA, IB=15mA

-

1.1

-

1.1

V

hFE

VCE=10V, IC=100μA

50

-

30

100

hFE

VCE=10V, IC=10mA

90

-

40

120

hFE

VCE=10V, IC=150mA

100

300

40

120

hFE

VCE=10V, IC=150mA, TA=-55°C

40

-

-

-

hFE

VCE=10V, IC=500mA

50

-

30

100

hFE

VCE=10V, IC=1.0A

15

-

15

-

fT

VCE=10V, IC=50mA, f=20MHz

100

-

100

-

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

-

12

-

12

pF

Cib

VEB=0.5V, IC=0, f=1.0MHz

-

60

-

60

pF

rb’Cc

VCE=10V, IC=10mA, f=4.0MHz

-

400

-

400

ps

NF

VCE=10V, IC=100μA, f=1.0kHz,

RS=1.0kΩ

-

4.0

-

-

dB

TO-39 CASE

R1 (11-June 2012)

www.centr a lsemi.com